? semiconductor components industries, llc, 2014 december, 2014 ? rev. 0 1 publication order number: nhpd660/d nhpd660, nrvhpd660 switch mode power rectifier dpak surface mount package these state?of?the?art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? ultrafast 30 nanosecond recovery time ? 175 c operating junction temperature ? high voltage capability of 600 v ? low forward drop ? low leakage specified @ 125 c case temperature ? nrv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant mechanical characteristics ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? esd ratings: ? machine model = c (> 400 v) ? human body model = 3b (> 8 kv) applications ? boost rectifier for smps pfc operating in continuous conduction mode (ccm) ? led lighting power conversion ? automotive diesel piezo injection ? thin and ultra thin flat panel display ? output rectification in high frequency high output voltage applications planar ultrafast rectifier 6.0 amperes, 600 volts 4 1 3 www. onsemi.com dpak case 369c marking diagram a = assembly location y = year ww = work week g = pb?free package ayww nhp d660t device package shipping ? ordering information nhpd660t4g dpak (pb?free) 2,500/tape & ree l 16 mm ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. NRVHPD660T4G dpak (pb?free) 2,500/tape & ree l 16 mm *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
nhpd660, nrvhpd660 www. onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 600 v average rectified forward current (rated v r , t c = 145 c) i f(av) 6.0 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 135 c) i frm 12.0 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, 60 hz) i fsm 60 a operating junction and storage temperature range t j , t stg ?65 to +175 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristics symbol value unit thermal resistance ? junction?to?case r jc 4.2 c/w thermal resistance ? junction?to?ambient (note 1) r ja 95.7 c/w 1. rating applies when surface mounted on the minimum pad sizes recommended. electrical characteristics characteristic test conditions symbol typ max unit instantaneous forward voltage (note 2) (i f = 6 a, t c = 125 c) (i f = 6 a, t c = 25 c) v f 1.45 2.4 1.8 3.0 v instantaneous reverse current (note 2) (rated dc voltage, t c = 125 c) (rated dc voltage, t c = 25 c) i r 35 0.035 300 30 a reverse recovery time (i f = 0.5 a, i rr = 0.25 a, i r = 1 a) (i f = 1 a, di f /dt = ?50 a/ s, v r = 30 v) t rr ? ? 30 50 ns reverse recovery time peak reverse recovery current total reverse recovery charge softness factor (i f = 6 a, d if /d t = ?200 a/ s, t c = 25 c) t rr i rm q rr s 30 2.3 37 2 50 3 50 ? ns a nc ? reverse recovery time peak reverse recovery current total reverse recovery charge softness factor (i f = 6 a, d if /d t = ?200 a/ s, t c = 125 c) t rr i rm q rr s 45 5.5 150 0.35 ? ? ? ? ns a nc ? forward recovery time forward voltage time (i f = 6 a, d if /d t = 120 a/ s, t c = 25 c) t fr v fp ? ? 200 6 ns v 2. pulse test: pulse width = 300 s, duty cycle 2.0%. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
nhpd660, nrvhpd660 www. onsemi.com 3 typical characteristics figure 1. typical instantaneous forward characteristics figure 2. maximum instantaneous forward characteristics v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) 2.5 2.0 3.5 1.5 1.0 0.5 0 0.001 1 10 100 3.0 2.0 1.0 0.5 0 0.001 1 10 100 figure 3. typical reverse characteristics figure 4. maximum reverse characteristics v r , instantaneous reverse voltage (v) v r , instantaneous reverse voltage (v) 400 300 200 100 0 1.e?12 600 300 200 100 0 figure 5. typical junction capacitance v r , reverse voltage (v) 0 10 100 1000 i f , instantaneous forward current (a) i r , instantaneous reverse current (a) c, junction capacitance (pf) 3.5 i f , instantaneous forward current (a) 600 1.e?05 1.e?04 1.e?03 1.e?02 1.e?09 1.e?04 1.e?03 1.e?02 i r , instantaneous reverse current (a) 20 200 t a = 125 c t a = ?40 c t a = 25 c t a = 150 c t a = 125 c t a = ?40 c t a = 25 c 1.e?10 figure 6. current derating t c , case temperature ( c) 80 60 160 140 20 0 0 3 6 9 i f(av) , average forward current (a) 12 40 100 square wave dc r jc = 4.2 c/w t j = 25 c 3.0 1.5 2.5 400 t a = 150 c t a = 175 c 0.1 0.01 t a = 175 c 0.1 0.01 t a = 125 c t a = ?40 c t a = 25 c t a = 150 c t a = 175 c 1.e?06 1.e?07 1.e?08 1.e?09 1.e?10 1.e?11 500 t a = 125 c t a = ?40 c t a = 25 c t a = 150 c t a = 175 c 1.e?05 1.e?06 1.e?07 1.e?08 500 40 60 80 100 120 140 160 180 1 2 4 5 7 8 10 11 120 180
nhpd660, nrvhpd660 www. onsemi.com 4 typical characteristics t j = 175 c figure 7. forward power dissipation i f(av) , average forward current (a) 2.0 1.0 0 0 2.0 2.5 3.0 p f(av) , average forward power dissipation (w) square wave dc i pk /i av = 5 i pk /i av = 20 i pk /i av = 10 0.5 1.5 0.5 1.0 1.5 figure 8. typical recovery characteristics i f(av) , average forward current (a) 7 5 4 1 0 0 10 15 35 t rr , reverse recovery time (ns) t rr v r = 30 v d i /d t = 50 a/ s 23 6 5 20 25 30 8 q rr q rr , recovered stored charge (ns) 0 10 15 35 5 20 25 30 0.1 0.00001 pulse time (s) 100 10 0.1 0.001 0.0001 0.001 0.01 1 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) figure 9. thermal response 1 0.01
nhpd660, nrvhpd660 www. onsemi.com 5 package dimensions dpak (single gauge) case 369c?01 issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nhpd660/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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